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| Transistor 2SA879 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1573 5.90.2 Unit: mm 4.90.2 q High collector to emitter voltage VCEO. +0.3 +0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25C) 2.540.15 Ratings -250 -200 -5 -100 -70 1 150 -55 ~ +150 Unit V V V mA mA 0.45-0.1 1.27 1.27 13.50.5 0.7-0.2 0.70.1 8.60.2 s Features 0.45-0.1 +0.2 C C s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO VCEO VEBO hFE* VCE(sat) fT Cob Conditions VCB = -12V, IB = 0 IC = -100A, IB = 0 IE = -1A, IC = 0 VCE = -10V, IC = -5mA IC = -50mA, IB = -5mA VCB = -10V, IE = 10mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz 50 80 5 10 -200 -5 60 220 -1.5 V MHz pF min typ max -2 Unit A V V *h FE Rank classification Q 60 ~ 150 R 100 ~ 220 hFE Rank 3.2 W 1 2 3 1:Emitter 2:Collector 3:Base EIAJ:SC-51 TO-92L Package 1 Transistor PC -- Ta 1.2 -120 Ta=25C 2SA879 IC -- VCE -120 VCE=-10V Ta=25C -100 IC -- IB Collector power dissipation PC (W) 1.0 -100 Collector current IC (mA) 0.8 -80 Collector current IC (mA) IB=-2mA -1.8mA -1.6mA -1.4mA -1.2mA -1.0mA - 0.8mA -80 0.6 -60 - 0.6mA -40 - 0.4mA -60 0.4 -40 0.2 -20 - 0.2mA -20 0 0 20 40 60 80 100 120 140 160 0 0 -2 -4 -6 -8 -10 0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 -2.4 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (mA) IB -- VBE -2.4 VCE=-10V Ta=25C -2.0 -100 -120 IC -- VBE Collector to emitter saturation voltage VCE(sat) (V) -100 -30 -10 -3 -1 VCE=-10V 25C Ta=75C -80 -25C VCE(sat) -- IC IC/IB=10 -1.6 -1.2 Collector current IC (mA) Base current IB (mA) -60 - 0.8 -40 - 0.3 - 0.1 - 0.03 - 0.01 - 0.1 - 0.3 25C Ta=75C -25C - 0.4 -20 0 0 - 0.2 - 0.4 - 0.6 - 0.8 -1.0 -1.2 0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 -1 -3 -10 -30 -100 Base to emitter voltage VBE (V) Base to emitter voltage VBE (V) Collector current IC (mA) hFE -- IC 300 VCE=-10V 160 140 120 100 80 60 40 20 0 - 0.1 - 0.3 0 0.1 fT -- IE 16 VCB=-10V f=100MHz Ta=25C Cob -- VCB Collector output capacitance Cob (pF) f=1MHz IE=0 Ta=25C Forward current transfer ratio hFE 250 Transition frequency fT (MHz) 14 12 10 8 6 4 2 0 -1 200 Ta=75C 150 25C 100 -25C 50 -1 -3 -10 -30 -100 0.3 1 3 10 30 100 -3 -10 -30 -100 Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V) 2 Transistor IEBO -- Ta 10000 3000 1000 VEB=-5V 10000 3000 1000 2SA879 ICBO -- Ta VCB=-250V -1000 -300 Area of safe operation (ASO) Single pulse Ta=25C Collector current IC (mA) -100 -30 ICP IC t=1s t=10ms 300 100 30 10 3 1 0 40 80 120 160 200 ICBO (Ta) ICBO (Ta=25C) IEBO (Ta) IEBO (Ta=25C) 300 100 30 10 3 1 0 40 80 120 160 200 -10 -3 -1 - 0.3 - 0.1 -1 -3 -10 -30 -100 -300 -1000 Ambient temperature Ta (C) Ambient temperature Ta (C) Collector to emitter voltage VCE (V) 3 |
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